Fowler–Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits

Hexagonal Boron Nitride (<i>h</i>-BN) is an exceptional dielectric material with significant potential for high-performance electronic and optoelectronic devices. While previous studies have explored its role in GaN-based MIS (metal/insulator/semiconductor) structures, the influence of few-layer <i>...

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Bibliografiska uppgifter

Huvudupphov:	Jiarui Zhang, Yikun Li, Shijun Luo, Yan Zhang, Man Luo, Hailu Wang, Chenhui Yu
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	MDPI AG 2025-08-01
Serie:	Nanomaterials
Ämnen:	few-layer <i>h</i>-BN Fowler–Nordheim tunneling effect AlGaN-based MIS TCAD simulation electrical characteristics
Länkar:	https://www.mdpi.com/2079-4991/15/15/1209
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