Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity

In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive stru...

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Autori principali:	V.N. Murashev, S.Yu. Yurchuk, S.A. Legotin, V.P. Yaromskiy, Yu.V. Osipov, V.P. Astahov, D.S. El’nikov, S.I. Didenko, O.I. Rabinovich, K.A. Kuz’mina
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Sumy State University 2015-06-01
Serie:	Журнал нано- та електронної фізики
Soggetti:	Silicon p-i-n-photodiode characteristics simulation Spectral sensitivity Optimization design of photodetector
Accesso online:	http://jnep.sumdu.edu.ua/download/numbers/2015/2/articles/jnep_2015_V7_02023.pdf
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