Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of the ITO-ZnO/n-GaN system was lower than that of the ITO...

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Principais autores:	Wei-Hua Hsiao, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jyun-Yong Li, Hong-Jyun Lin, Nan-Jay Wu, Day-Shan Liu
Format:	Artigo
Jezik:	Inglês
Izdano:	MDPI AG 2016-02-01
Serija:	Applied Sciences
Teme:	cosputtered ITO-ZnO n-GaN transparent electrode Ti interlayer ohmic contact figure-of-merit
Online dostop:	http://www.mdpi.com/2076-3417/6/2/60
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