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Study on P-AlGaAs/Al/Au Ohmic Contact Characteristics for Improving Optoelectronic Response of Infrared Light-Emitting Device

The Al/Au alloy was investigated to improve the ohmic characteristic and light efficiency of reflective infrared light-emitting diodes (IR-LEDs). The Al/Au alloy, which was fabricated by combining 10% aluminum and 90% gold, led to considerably improved conductivity on the top layer of p-AlGaAs of th...

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Principais autores: Hyung-Joo Lee, Jae-Sam Shim, Jin-Young Park, Lee-Ku Kwac, Chang-Ho Seo
Formato: Artigo
Idioma:Inglês
Publicado em: MDPI AG 2023-05-01
coleção:Micromachines
Assuntos:
Al/Au alloy
p-AlGaAs
ohmic contact
reflective structure
light-emitting diode
Acesso em linha:https://www.mdpi.com/2072-666X/14/5/1053
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