Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications
Recently, hexagonal boron nitride (h-BN), an ultra-wide bandgap semiconductor, has attracted considerable attention owing to its excellent properties. In thin films grown on metal catalysts, contamination and damage induced by a transfer process cannot be avoided. Therefore, synthesizing h-BN films...
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| Principais autores: | , , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
KeAi Communications Co. Ltd.
2021-11-01
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| Colecção: | Fundamental Research |
| Assuntos: | |
| Acesso em linha: | http://www.sciencedirect.com/science/article/pii/S2667325821002041 |
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