Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

Recently, hexagonal boron nitride (h-BN), an ultra-wide bandgap semiconductor, has attracted considerable attention owing to its excellent properties. In thin films grown on metal catalysts, contamination and damage induced by a transfer process cannot be avoided. Therefore, synthesizing h-BN films...

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Bibliografische Detailangaben

Hauptverfasser:	Gaokai Wang, Jingren Chen, Junhua Meng, Zhigang Yin, Ji Jiang, Yan Tian, Jingzhen Li, Jinliang Wu, Peng Jin, Xingwang Zhang
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	KeAi Communications Co. Ltd. 2021-11-01
Schriftenreihe:	Fundamental Research
Schlagworte:	Hexagonal boron nitride Pulsed laser deposition Raman spectroscopy Photodetectors
Online-Zugang:	http://www.sciencedirect.com/science/article/pii/S2667325821002041
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