Influence of fabrication parameters on the Schottky barrier modulation of Mo/MoOx/IGZO/Ti/Mo memristor

This study investigates the impact of annealing and plasma treatments on the electrical and structural properties of Mo/MoO _x /IGZO/Ti/Mo memristors, with focus on the effective Schottky barrier modulation at the MoO _x /IGZO interface. The IGZO memristors demonstrate reliable analog switching with...

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Detalles Bibliográficos

Principais autores:	Maria Elias Pereira, Jonas Deuermeier, Tomás Mingates, Patrícia Almeida Carvalho, Tomás Calmeiro, Elvira Fortunato, Rodrigo Martins, Pedro Barquinha, Asal Kiazadeh
Formato:	Artigo
Idioma:	Inglês
Publicado:	IOP Publishing 2026-01-01
Series:	JPhys Materials
Assuntos:	eightwise switching IGZO memristors plasma treatment passivation annealing Schottky barrier modulation
Acceso en liña:	https://doi.org/10.1088/2515-7639/ae35a7
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