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Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN<sub>x</sub> Gate Dielectric at Different Temperatures

In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiN<sub>x</sub> gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temperature, the t...

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Autori principali: Dongsheng Zhao, Liang He, Lijuan Wu, Qingzhong Xiao, Chang Liu, Yuan Chen, Zhiyuan He, Deqiang Yang, Mingen Lv, Zijun Cheng
Natura: Artigo
Lingua:Inglês
Pubblicazione: MDPI AG 2024-01-01
Serie:Micromachines
Soggetti:
SiN<sub>x</sub>
AlGaN/GaN HEMT
hydrogen
interface trap
border trap
Accesso online:https://www.mdpi.com/2072-666X/15/2/171
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