Annealing Stability of NiO/Ga₂O₃ Vertical Heterojunction Rectifiers

The stability of vertical geometry NiO/Ga₂O₃ rectifiers during two types of annealing were examined, namely (1) the annealing of NiO only, prior to the deposition of the Ni/Au metal anode stack, and (2) the annealing of the completed device. The devices were annealed in oxygen...

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Bibliografiska uppgifter

Huvudupphov:	Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	MDPI AG 2023-07-01
Serie:	Crystals
Ämnen:	NiO Ga<sub>2</sub>O<sub>3</sub> rectifiers high breakdown annealing
Länkar:	https://www.mdpi.com/2073-4352/13/8/1174
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