Investigation of the Irradiation Influence with High-energy Electronson the Electrical Parameters of the IGBT-transistors
The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of com...
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| Autors principals: | , , , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Sumy State University
2015-03-01
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| Col·lecció: | Журнал нано- та електронної фізики |
| Matèries: | |
| Accés en línia: | http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01011.pdf |
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