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Investigation of the Irradiation Influence with High-energy Electronson the Electrical Parameters of the IGBT-transistors

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of com...

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Principais autores: V.N. Murashev, M.P. Konovalov, S.A. Legotin, S.I. Didenko, O.I. Rabinovich, A.A. Krasnov, K.A. Кuzmina
Format: Artigo
Sprog:Inglês
Udgivet: Sumy State University 2015-03-01
Serier:Журнал нано- та електронної фізики
Fag:
IGBT-transistors
Irradiation
Systems
Radioisotop
Online adgang:http://jnep.sumdu.edu.ua/download/numbers/2015/1/articles/jnep_2015_V7_01011.pdf
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