Indium Saving Indium Tin Oxide Thin Films Deposited by Sputtering at Room Temperature
<p><span>Indium saving indium tin oxide ITO thin films have been deposited using a sputtering deposition technique in pure Ar and in mixed argon-oxygen atmosphere at room temperature. A transmittance value of more than 85 % in the visible region of the spectrum and a resistivity of 2420 µΩcm has bee...
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| Principais autores: | , , , , , |
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| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Vasyl Stefanyk Carpathian National University
2018-01-01
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| Serier: | Фізика і хімія твердого тіла |
| Online adgang: | http://journals.pu.if.ua/index.php/pcss/article/view/2253 |
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