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Investigation of the effect of pressure, sintering temperature and time on silicon carbide microstructure

In this research, SiC ceramics were densified via spark plasma sintering (SPS) with 0.5wt.% B4C and 1.5wt.% C additions at temperatures ranging from 1900 to 2000°C for 5-65min under 10-50MPa applied pressure with an intermediate dwell at 1400°C, and the effects of applied pressure, sintering tempera...

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Autores principales: Yasar Zeynep Ayguzer, DeLucca Vincent A., Haber Richard A.
Formato: Artigo
Lenguaje:Inglês
Publicado: University of Novi Sad 2022-06-01
Colección:Processing and Application of Ceramics
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Acceso en línea:https://doiserbia.nb.rs/img/doi/1820-6131/2023/1820-61312302189Y.pdf
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