Atomic Layer Deposition of Metallic Molybdenum Dioxide Thin Films Enabling High‐k Rutile Capacitors

ABSTRACT Molybdenum dioxide (MoO2) thin films have attracted considerable attention as electrode materials for high‐k capacitors, such as those used in dynamic random‐access memory (DRAM) devices. Properties that make MoO2 highly attractive include high conductivity, high work function (> 5 eV), dis...

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Autori principali:	Alexey Ganzhinov, Miika Mattinen, Marko Vehkamäki, Kenichiro Mizohata, Mykhailo Chundak, Georgi Popov, Paavo Porri, Mikko Ritala, Matti Putkonen
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2026-07-01
Serie:	Advanced Materials Interfaces
Accesso online:	https://doi.org/10.1002/admi.70512
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