Preparation of Te-based compound target for amorphous semiconductor thin film
When a certain threshold switching voltage is applied to a semiconductor of Te-based compound in a high-impedance amorphous state, the semiconductor transits into a low-resistance state, and the resistance difference is more than five orders of magnitude. Therefore, TeAsGeSi material can be prepared...
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| Hlavní autoři: | , , , , , , |
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| Médium: | Artigo |
| Jazyk: | Chinês |
| Vydáno: |
Science Press
2019-02-01
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| Edice: | 工程科学学报 |
| Témata: | |
| On-line přístup: | http://cje.ustb.edu.cn/article/doi/10.13374/j.issn2095-9389.2019.02.009 |
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