Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structur...
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| Autor principal: | |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Islamic Azad University, Marvdasht Branch
2020-05-01
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| Col·lecció: | Journal of Optoelectronical Nanostructures |
| Matèries: | |
| Accés en línia: | https://jopn.marvdasht.iau.ir/article_4221_83ad9edbd0c81fe0db4c52fc84e71848.pdf |
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