A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for correlative electroluminescence (EL) defect l...

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Автори:	Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier
Формат:	Artigo
Мова:	Inglês
Опубліковано:	Elsevier 2025-06-01
Серія:	Power Electronic Devices and Components
Предмети:	GaN HEMT TEM investigation FIB preparation workflows allowing a combined cross sectional and planar TEM analysis dislocation Physical failure analysis
Онлайн доступ:	http://www.sciencedirect.com/science/article/pii/S2772370425000136
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