Valley-dependent quasi-ballistic electron transport in FETs based on multi-valley semiconductors
We study quasi-ballistic transport in field effect transistors (FETs) with the conductive channels containing several groups of the carriers. These groups are considered independent in the sense of the absence of inter-group exchange, but their dynamics is strongly coupled through collective electro...
Збережено в:
| Автори: | , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
AIP Publishing LLC
2024-07-01
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| Серія: | AIP Advances |
| Онлайн доступ: | http://dx.doi.org/10.1063/5.0224808 |
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