Valley-dependent quasi-ballistic electron transport in FETs based on multi-valley semiconductors
We study quasi-ballistic transport in field effect transistors (FETs) with the conductive channels containing several groups of the carriers. These groups are considered independent in the sense of the absence of inter-group exchange, but their dynamics is strongly coupled through collective electro...
-д хадгалсан:
| Үндсэн зохиолчид: | , |
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| Формат: | Artigo |
| Хэл сонгох: | Inglês |
| Хэвлэсэн: |
AIP Publishing LLC
2024-07-01
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| Цуврал: | AIP Advances |
| Онлайн хандалт: | http://dx.doi.org/10.1063/5.0224808 |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
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