Recent advances in contact resistivity at metal–semiconductor interfaces for post-Moore nanoscale devices
Post-Moore nanoscale devices are driving the next wave of semiconductor advancement through three-dimensional architectures and material innovation. However, the shrinking source/drain contact area has made metal–semiconductor contact resistivity (ρc) a critical performance bottleneck. Conventional...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
AIP Publishing LLC
2026-02-01
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| Colecção: | APL Electronic Devices |
| Acesso em linha: | https://pubs.aip.org/aip/aed/article-pdf/doi/10.1063/5.0308539/20886640/011501_1_5.0308539.pdf |
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