A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications

We have simulated a U-shape recessed channel floating gate memory by Sentaurus TCAD tools. Since the floating gate (FG) is vertically placed between source (S) and drain (D), and control gate (CG) and HfO₂ high-k dielectric extend above source and drain, the integrated density can be well...

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Bibliografiska uppgifter

Huvudupphov:	Lu-Rong Gan, Ya-Rong Wang, Lin Chen, Hao Zhu, Qing-Qing Sun
Materialtyp:	Artigo
Språk:	Inglês
Utgiven:	MDPI AG 2019-08-01
Serie:	Micromachines
Ämnen:	U-shape recessed channel floating gate neuromorphic computing MCU (microprogrammed control unit)
Länkar:	https://www.mdpi.com/2072-666X/10/9/558
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