A Comprehensive Study of Threshold Voltage Extraction Techniques From Room to Cryogenic Temperatures
In this article, we present a comprehensive overview of the negative transconductance observed in native (or zero-threshold) MOSFETs at cryogenic temperatures. These devices exhibit negative transconductance, characterized by a drop in the drain-to-source current as the gate voltage increases below...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
IEEE
2025-01-01
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| Serie: | IEEE Journal of the Electron Devices Society |
| Soggetti: | |
| Accesso online: | https://ieeexplore.ieee.org/document/10759658/ |
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