Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter
Abstract Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it...
Kaydedildi:
| Asıl Yazarlar: | , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
SpringerOpen
2018-09-01
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| Seri Bilgileri: | Nanoscale Research Letters |
| Konular: | |
| Online Erişim: | http://link.springer.com/article/10.1186/s11671-018-2721-0 |
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