Conversion of Multi-layered MoTe2 Transistor Between P-Type and N-Type and Their Use in Inverter

Abstract Both p-type and n-type MoTe2 transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe2 transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it...

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Bibliografiset tiedot

Päätekijät:	Junku Liu, Yangyang Wang, Xiaoyang Xiao, Kenan Zhang, Nan Guo, Yi Jia, Shuyun Zhou, Yang Wu, Qunqing Li, Lin Xiao
Aineistotyyppi:	Artigo
Kieli:	Inglês
Julkaistu:	SpringerOpen 2018-09-01
Sarja:	Nanoscale Research Letters
Aiheet:	MoTe2 P-type N-type Absorbates Vacancies
Linkit:	http://link.springer.com/article/10.1186/s11671-018-2721-0
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