Non-volatile Fermi level tuning for the control of spin-charge conversion at room temperature

Abstract Current silicon-based CMOS devices face physical limitations in downscaling size and power loss, restricting their capability to meet the demands for data storage and information processing of emerging technologies. One possible alternative is to encode the information in a non-volatile mag...

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Principais autores:	Jonghyeon Choi, Jungmin Park, Seunghyeon Noh, Jaebyeong Lee, Seunghyun Lee, Daeseong Choe, Hyeonjung Jung, Junhyeon Jo, Inseon Oh, Juwon Han, Soon-Yong Kwon, Chang Won Ahn, Byoung-Chul Min, Hosub Jin, Choong H. Kim, Kyoung-Whan Kim, Jung-Woo Yoo
Format:	Artigo
Jezik:	Inglês
Izdano:	Nature Portfolio 2024-10-01
Serija:	Nature Communications
Online dostop:	https://doi.org/10.1038/s41467-024-52835-z
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