Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot
The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K. The calculated zero bias barrier height () and the ideality factor (n) using thermionic theory show strong temperature dependence. The experimental...
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| Hlavní autoři: | , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Sumy State University
2016-06-01
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| Edice: | Журнал нано- та електронної фізики |
| Témata: | |
| On-line přístup: | http://jnep.sumdu.edu.ua/download/numbers/2016/2/articles/jnep_2016_V8_02006.pdf |
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