Performance study of non-recess structure for β-Ga2O3 MOSFETs applications
In this work, high-quality β-Ga2O3 epitaxial layers were grown on c-plane sapphire substrates via metalorganic chemical vapor deposition. The device structure sequentially comprised a heavily doped Ga2O3 layer (10 nm), a lightly doped Ga2O3 layer (10 nm), an (Al0.21Ga0.79)2O3 layer (10 nm), and an u...
Tallennettuna:
| Päätekijät: | , , , , , |
|---|---|
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Elsevier
2026-03-01
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| Sarja: | Results in Engineering |
| Aiheet: | |
| Linkit: | http://www.sciencedirect.com/science/article/pii/S2590123025048005 |
| Tagit: |
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