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Controllable floating gate memory performance through device structure design

Floating gate memory devices based on two-dimensional materials hold tremendous potential for high-performance nonvolatile memory. However, the memory performance of the devices utilizing the same two-dimensional heterostructures exhibits significant differences from lab to lab, which is often attri...

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Bibliografiska uppgifter
Huvudupphov: Ruitong Bie, Ce Li, Zirui Zhang, Tianze Yu, Dongliang Yang, Binghe Liu, Linfeng Sun
Materialtyp: Artigo
Språk:Inglês
Utgiven: Elsevier 2025-12-01
Serie:Chip
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Länkar:http://www.sciencedirect.com/science/article/pii/S2709472325000255
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