Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology
This paper presents a 802.11ac low-noise amplifier with bypass function integrated in 0.36 μm SiGe BiCMOS process. In order to meet the specifications of the criteria, the methods for optimizing noise, power gain and stability were given. In the circuit design, the SiGe HBTs were designed with induc...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Chinês |
| Vydáno: |
National Computer System Engineering Research Institute of China
2018-07-01
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| Edice: | Dianzi Jishu Yingyong |
| Témata: | |
| On-line přístup: | http://www.chinaaet.com/article/3000085732 |
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