Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes

We have studied the defect states and electronic transport mechanisms in the mismatched p-InP/i-InGaAs/n-InP photodiode grown by molecular beam epitaxy (MBE) using deep-level transient spectroscopy (DLTS) and current–voltage (I–V) measurements. Two defect states were observed in the p-InP layer, whi...

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Bibliografski detalji

Glavni autori:	Thi Kim Oanh Vu, Minh Tien Tran, Nguyen Xuan Tu, Nguyen Thi Thanh Bao, Eun Kyu Kim
Format:	Artigo
Jezik:	Inglês
Izdano:	Elsevier 2022-07-01
Serija:	Journal of Materials Research and Technology
Teme:	p-InP/i-InGaAs/n-InP photodiode Defect states Electronic transport DLTS MBE
Online pristup:	http://www.sciencedirect.com/science/article/pii/S2238785422008894
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