Analytical Modeling of Exposure Process in Pinned Photodiode CMOS Image Sensors
The output features of pixels in CMOS image sensors (CISs) are influenced by different exposure conditions. This article presents an analytical model to describe the output characteristics of the exposure process in pinned photodiode (PPD) CMOS image sensors with the accumulation of three charge sou...
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| Hauptverfasser: | , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
IEEE
2020-01-01
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| Schriftenreihe: | IEEE Journal of the Electron Devices Society |
| Schlagworte: | |
| Online-Zugang: | https://ieeexplore.ieee.org/document/9205305/ |
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