An Improved Model for the Full Well Capacity in Pinned Photodiode CMOS Image Sensors
An improved analytical model for quantifying the full well capacity in pinned photodiode (PPD) CMOS image sensors is proposed. The model captures the characteristics of the realistic technology-induced vertical doping nonuniformity in photon sensing N-type area of the PPD structure and the voltage d...
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| Principais autores: | , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2015-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/7086280/ |
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