Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
ABSTRACT The discovery of ferroelectricity in HfO2 offering the advantage of nonvolatile polarization switching creates a renewed interest in the semiconductor memory industry. Doped HfO2‐based thin films maintain stable remanent polarization (Pr) at nanometer‐scale thicknesses within back‐end‐of‐li...
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| Principais autores: | , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Wiley-VCH
2026-06-01
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| Series: | Advanced Materials Interfaces |
| Assuntos: | |
| Acceso en liña: | https://doi.org/10.1002/admi.202600003 |
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