The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si
200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rect...
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| Главные авторы: | , , , |
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| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Sumy State University
2012-03-01
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| Серии: | Журнал нано- та електронної фізики |
| Предметы: | |
| Online-ссылка: | http://jnep.sumdu.edu.ua/download/numbers/2012/1/articles/jnep_2012_V4_01012.pdf |
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