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Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1‐xO2/SiO2 Interface in Ferroelectric Field‐Effect‐Transistor

ABSTRACT In this work, the polarization‐dependent operating characteristics of TiN/HfxZr1‐xO2(HZO)/SiO2/Si ferroelectric FETs (FeFETs) are investigated, and remote HZO/SiO2 interface traps (Dit,FE/DE) are quantitatively separated from Si/SiO2 interface traps (Dit0). X‐ray photoelectron spectroscopy...

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Kaydedildi:
Asıl Yazarlar: Haneul Lee, Sujong Kim, Changhyeon Han, Haesung Kim, Hyojin Yang, Sejun Park, Sanghyuk Yun, Yoon Jung Lee, Sung‐Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong‐Ho Bae
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Wiley-VCH 2026-01-01
Seri Bilgileri:Advanced Electronic Materials
Konular:
charge trapping
ferroelectric hafnium‐zirconium oxide
ferroelectric transistor
interface states
quantitative analysis
Online Erişim:https://doi.org/10.1002/aelm.202500549
Etiketler: Etiketle
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