A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction tunneling field-effect transistor (TFET). The CS TFET “line-tunneling” current increases significantly with the...

ver descrição completa

Detalhes bibliográficos

Principais autores:	Aryan Afzalian, Gerben Doornbos, Tzer-Min Shen, Matthias Passlack, Jeff Wu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	IEEE 2019-01-01
Colecção:	IEEE Journal of the Electron Devices Society
Assuntos:	Semiconductor device modeling semiconductor heterojunctions tunnel transistors quantum wires quantum effect semiconductor devices quantum theory
Acesso em linha:	https://ieeexplore.ieee.org/document/8539977/
Tags:	Adicionar Tag Sem tags, seja o primeiro a adicionar uma tag!