Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2

Abstract Substitutionally doped transition metal dichalcogenides (TMDs) are essential for advancing TMD‐based field effect transistors, sensors, and quantum photonic devices. However, the impact of local dopant concentrations and dopant–dopant interactions on charge doping and defect formation withi...

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Autori principali:	Kyle T. Munson, Riccardo Torsi, Fatimah Habis, Lysander Huberich, Yu‐Chuan Lin, Yue Yuan, Ke Wang, Bruno Schuler, Yuanxi Wang, John B. Asbury, Joshua A. Robinson
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2025-03-01
Serie:	Advanced Electronic Materials
Soggetti:	2D materials defects doping TMDs
Accesso online:	https://doi.org/10.1002/aelm.202400403
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