Influence of Rhenium Concentration on Charge Doping and Defect Formation in MoS2
Abstract Substitutionally doped transition metal dichalcogenides (TMDs) are essential for advancing TMD‐based field effect transistors, sensors, and quantum photonic devices. However, the impact of local dopant concentrations and dopant–dopant interactions on charge doping and defect formation withi...
Kaydedildi:
| Asıl Yazarlar: | , , , , , , , , , , |
|---|---|
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley-VCH
2025-03-01
|
| Seri Bilgileri: | Advanced Electronic Materials |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/aelm.202400403 |
| Etiketler: |
Etiket eklenmemiş, İlk siz ekleyin!
|