Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation
Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples...
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| Asıl Yazarlar: | , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2022-08-01
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| Seri Bilgileri: | Sensors |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/1424-8220/22/17/6340 |
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