Etching rate of silicon nanowires with highly doped silicon during metal-assisted chemical etching
The fabrication of silicon nanowires (SiNWs) by metal-assisted chemical etching (MACE) has been widely studied in a variety of fields. SiNWs by high-doped silicon are potential materials to be applied in thermoelectric, lithium-ion batteries and sensors. However, existing studies on the etching char...
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| Автори: | , , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
IOP Publishing
2022-01-01
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| Серія: | Materials Research Express |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1088/2053-1591/aca008 |
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