Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs. In this work, we propose a prospective study for the realization of an InP/InGaAs tandem sol...

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Hlavní autoři:	Soresi Stefano, da Lisca Mattia, Besancon Claire, Vaissiere Nicolas, Larrue Alexandre, Calo Cosimo, Alvarez José, Longeaud Christophe, Largeau Ludovic, Garcia Linares Pablo, Tournié Eric, Kleider Jean-Paul, Decobert Jean
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	EDP Sciences 2023-01-01
Edice:	EPJ Photovoltaics
Témata:	iii-v/si nasp commercial template inp/ingaas movpe
On-line přístup:	https://www.epj-pv.org/articles/epjpv/full_html/2023/01/pv220041/pv220041.html
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