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Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films

We experimentally investigated the effect of post-growth annealing on the morphological, structural, and electrophysical parameters of nanocrystalline ZnO films fabricated by pulsed laser deposition. The influence of post-growth annealing modes on the electroforming voltage and the resistive switchi...

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Autors principals: Roman V. Tominov, Zakhar E. Vakulov, Vadim I. Avilov, Daniil A. Khakhulin, Aleksandr A. Fedotov, Evgeny G. Zamburg, Vladimir A. Smirnov, Oleg A. Ageev
Format: Artigo
Idioma:Inglês
Publicat: MDPI AG 2020-05-01
Col·lecció:Nanomaterials
Matèries:
neuromorphic systems
memristor
ReRAM
resistive switching
nanocrystalline ZnO
pulsed laser deposition
Accés en línia:https://www.mdpi.com/2079-4991/10/5/1007
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