Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectros...

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Главные авторы:	Simeon Simeonov, Anna Szekeres, Dencho Spassov, Mihai Anastasescu, Ioana Stanculescu, Madalina Nicolescu, Elias Aperathitis, Mircea Modreanu, Mariuca Gartner
Формат:	Artigo
Язык:	Inglês
Опубликовано:	MDPI AG 2021-12-01
Серии:	Nanomaterials
Предметы:	RF magnetron sputtering ZnO:N thin films Raman spectroscopy photoluminescence spectroscopy electrical characteristics charge carrier transport properties
Online-ссылка:	https://www.mdpi.com/2079-4991/12/1/19
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