Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2
Abstract The high contact resistance between MoS2 and metals hinders its potential as an ideal solution for overcoming the short‐channel effect in silicon‐based FETs at sub‐3 nm scales. A MoS2‐based transistor, featuring bilayer MoS2 connected to Cu‐intercalated bilayer MoS2 electrodes is theoretica...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley-VCH
2025-08-01
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| Col·lecció: | Advanced Electronic Materials |
| Matèries: | |
| Accés en línia: | https://doi.org/10.1002/aelm.202500100 |
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