Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering

Ferroelectric HfO2‐based films incorporated in nonvolatile memory devices offer a low‐energy, high‐speed alternative to conventional memory systems. Oxygen vacancies have been rigorously cited in literature to be pivotal in stabilizing the polar noncentrosymmetric phase responsible for ferroelectric...

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Dettagli Bibliografici

Autori principali:	Atif Jan, Stephanie A. Fraser, Taehwan Moon, Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk‐Hyun Choe, Maximilian T. Becker, Judith L. MacManus‐Driscoll, Jinseong Heo, Giuliana Di Martino
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Wiley-VCH 2024-11-01
Serie:	Small Science
Soggetti:	dark‐field spectroscopies domain wall motions fatigues HZO ultrathin ferroelectric random‐access memories oxygen vacancy migrations Raman and photoluminescence
Accesso online:	https://doi.org/10.1002/smsc.202400223
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