Resetting the Drift of Oxygen Vacancies in Ultrathin HZO Ferroelectric Memories by Electrical Pulse Engineering

Ferroelectric HfO2‐based films incorporated in nonvolatile memory devices offer a low‐energy, high‐speed alternative to conventional memory systems. Oxygen vacancies have been rigorously cited in literature to be pivotal in stabilizing the polar noncentrosymmetric phase responsible for ferroelectric...

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Hlavní autoři:	Atif Jan, Stephanie A. Fraser, Taehwan Moon, Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk‐Hyun Choe, Maximilian T. Becker, Judith L. MacManus‐Driscoll, Jinseong Heo, Giuliana Di Martino
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley-VCH 2024-11-01
Edice:	Small Science
Témata:	dark‐field spectroscopies domain wall motions fatigues HZO ultrathin ferroelectric random‐access memories oxygen vacancy migrations Raman and photoluminescence
On-line přístup:	https://doi.org/10.1002/smsc.202400223
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