3T2M canted-type x SOT-MRAM: Field-free, high-energy-efficiency, and high-read-margin memory toward cache applications

We propose a novel cell structure of spin–orbit torque (SOT) magnetic random-access memory (MRAM), which consists of three transistors and two canted-type x SOT magnetic tunnel junctions (3T2M) with opposite canting angle (+φ/-φ) on a shared heavy-metal, enabling a self-referencing scheme. Owing to...

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Autori principali:	Long Liu, Di Wang, Huai Lin, Xuefeng Zhao, Ziwei Wang, Nuo Xu, Xi Luo, Nan Gao, Xiaoyong Xue, Cheng Pan, Changqing Xie, Guozhong Xing
Natura:	Artigo
Lingua:	Inglês
Pubblicazione:	Elsevier 2022-12-01
Serie:	Journal of Science: Advanced Materials and Devices
Soggetti:	Spin–orbit torque Canted type-x MTJ SOT-MRAM Sensing margin Reliability
Accesso online:	http://www.sciencedirect.com/science/article/pii/S2468217922000922
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