Reliable Sub-Nanosecond Switching of a Perpendicular SOT-MRAM Cell without External Magnetic Field
The steady increase in performance and speed of modern integrated circuits is continuously supported by constant miniaturization of complementary metal-oxide semiconductor (CMOS) devices. However, a rapid growth of the dynamic and stand-by power due to transistor leakages becomes a pressing issue....
Na minha lista:
| Principais autores: | , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
International Institute of Informatics and Cybernetics
2018-04-01
|
| coleção: | Journal of Systemics, Cybernetics and Informatics |
| Assuntos: | |
| Acesso em linha: | http://www.iiisci.org/Journal/CV$/sci/pdfs/SA365HC18.pdf
|
| Tags: |
Sem tags, seja o primeiro a adicionar uma tag!
|