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Active Radiation-Hardening Strategy in Bulk FinFETs

In this article, we present a new method to mitigate the effect of the charge collected by trigate FinFET devices after an ionizing particle impact. The method is based on the creation of an internal structure that generates an electrical field that drives the charge generated by the ion track out o...

Ausführliche Beschreibung

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Bibliografische Detailangaben
Hauptverfasser: Antonio Calomarde, Antonio Rubio, Francesc Moll, Francisco Gamiz
Format: Artigo
Sprache:Inglês
Veröffentlicht: IEEE 2020-01-01
Schriftenreihe:IEEE Access
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Online-Zugang:https://ieeexplore.ieee.org/document/9249242/
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