High-Performance Bidirectional Chemical Sensor Platform Using Double-Gate Ion-Sensitive Field-Effect Transistor with Microwave-Assisted Ni-Silicide Schottky-Barrier Source/Drain

This study proposes a bidirectional chemical sensor platform using ambipolar double-gate ion-sensitive field-effect transistors (ISFET) with microwave-assisted Ni-silicide Schottky-barrier (SB) source and drain (S/D) on a fully depleted silicon-on-insulator (FDSOI) substrate. The microwave-assisted...

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Autors principals:	Yeong-Ung Kim, Won-Ju Cho
Format:	Artigo
Idioma:	Inglês
Publicat:	MDPI AG 2022-03-01
Col·lecció:	Chemosensors
Matèries:	Ni-silicide Schottky-barrier source and drain ambipolar conductance characteristics microwave irradiation (MWI) ion-sensitive field-effect transistor (ISFET) capacitive coupling
Accés en línia:	https://www.mdpi.com/2227-9040/10/4/122
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